Package method and package structure of fan-out chip

ABSTRACT

A packaging method and a package structure of a fan-out chip are disclosed. The package structure comprises a first chip with bumps and a second chip without bumps, a first dielectric layer formed on a surface of the second chip and through-holes fabricated in the first dielectric layer; a plastic package material; a second dielectric layer; a metal redistribution layer for interconnecting within and between the first chip and the second chip; under bump metallization layers and micro-bumps. By fabricating the dielectric layers with the through-holes on the surfaces of the first chip and the second chip, exposing the bumps of the first chip and metal pads of the second chip and subsequently fabricating the metal redistribution layer, the interconnections within and between the first chip and the second chip are achieved and thereby the integrated package of the first chip and the second chip is achieved.

CROSS REFERENCES

This application claims the benefit of priority to Chinese PatentApplication No. CN 2016100462921, entitled “packaging method and packagestructure of fan-out chip”, filed with the Chinese Patent Office on Jan.22, 2016, and PCT application PCT/CN2016/082816, entitled “packagingmethod and package structure of fan-out chip”, filed with WIPO on May20, 2016, the contents of which are incorporated herein by reference inits entirety.

TECHNICAL FIELD

The present application relates to a packaging method and a packagestructure of a semiconductor chip, particularly relates to a packagingmethod and a package structure of a fan-out chip.

BACKGROUND

With rapid development of the integrated circuit manufacturing industry,requirements on integrated circuit packaging technologies continuouslyincrease. The existing packaging technologies include a ball grid array(BGA) package, a chip scale package (CSP), a wafer level package (WLP),a three-dimensional (3D) package and a system in package (SiP) and thelike, where the wafer level package (WLP)is gradually adopted by mostsemiconductor manufacturers because of their excellent advantages, allor most process steps thereof are completed on a silicon wafer withprevious processes completed, and finally the wafer is directly cut intoseparated independent devices. The wafer level package (WLP) has thefollowing unique advantages: (1) the packaging and processingefficiencies are high as multiple wafers can be simultaneouslyprocessed; (2) it has advantages of a flip chip packaging, i.e.,lightweight, thin, short and small; (3) as compared with the previousprocesses, two processes, i.e., a pin redistribution (RDL) and a bumpfabrication, are added, and all other processes are traditionalprocesses; and (4) repetitive tests in the traditional package aredecreased. Therefore, large IC package companies worldwide vigorouslyhave studied, developed and produced wafer level package (WLP).

Using existing fan-out chip packaging technologies, solder bumps arefabricated until the semiconductor chip is cut. As a result, there maybe some abnormal problems occur during the fabrication process, e.g.,how to package semiconductor chips preformed with initial bumps, or howto achieve an interconnection between a chip having initial bumps and achip not having initial bumps.

There are no effective methods to solve the problems in the prior artswhich solve the problem of how to integrally package the chip havinginitial bumps and the chip having no initial bumps as well as how toachieve the interconnection therebetween.

In view of the above-mentioned reasons, there is a need to provide apackaging method and a package structure to effectively achieve thepackage of and the interconnection between a semiconductor chip withinitial bumps and a chip without the initial bumps.

SUMMARY

The present application provides a packaging method for a fan-out chip,in particular it provides a packaging method and a package structurewhich may effectively achieve a package and an interconnection between asemiconductor chip with an initial bumps and a chip without initialbumps.

The present application provides a packaging method of a fan-out chip,comprising: step 1) providing a first chip with solder bumps and asecond chip without solder bumps (use “bump” hereafter), forming a firstdielectric layer on a surface of the second chip, and fabricatingthrough-holes in the first dielectric layer; step 2) providing a carrierwith a bonding layer formed on a surface thereof, and bonding the firstchip and the second chip to the bonding layer; step 3) packaging thefirst chip and the second chip, wherein the bumps of the first chip andthe through-holes of the first dielectric layer on the surface of thesecond chip are exposed after the package; step 4) depositing a seconddielectric layer covering the first chip and the second chip, withwindows opened over each bump of the first chip and the through-holes ofthe second chip; step 5) fabricating a metal redistribution layeraligned to the windows to achieve electrical interconnection of thefirst chip and the second chip; and step 6) fabricating under-bumpmetallization layers and micro-bumps on the metal redistribution layer.

As a preferred solution of the packaging method of the fan-out chipprovided by the present disclosure, the packaging method of the fan-outchip further comprises a step 7) of removing the carrier and the bondinglayer.

Preferably, the carrier comprises one of a glass slab, a transparentsemiconductor material and a transparent polymer.

Preferably, the bonding layer comprises a UV bonding adhesive, and inthe step 7), an exposure method is adopted for decreasing adhesivenessof the UV bonding adhesive to achieve a separation of the UV bondingadhesive from a plastic packaging material.

As a preferred solution of the packaging method of the fan-out chipprovided by the present invention, the packaging method of the fan-outchip further comprises a step of bonding an adhesive tape to a surfaceof the first dielectric layer for protection after the step 1) offabricating through-holes in the first dielectric layer, and a step ofremoving the adhesive tape after the step 3) of packaging.

As a preferred solution of the packaging method of the fan-out chipprovided by the present invention, the first dielectric layer comprisesone of silicon dioxide, phosphorus-silicate glass, silicon oxycarbide,silicon carbide and polymer.

As a preferred solution of the packaging method of the fan-out chipprovided by the present invention, the dielectric layers are formed onthe surfaces of the chips by adopting a spin-coating method, a chemicalvapor deposition method or a plasma-enhanced chemical vapor depositionmethod.

As a preferred solution of the packaging method of the fan-out chipprovided by the present invention, in the step 3), the plastic packagematerial which has packaged the first chip and the second chip has aheight not exceeding the heights of each bump and the first dielectriclayer after the package, such that each bump and the first dielectriclayer are exposed from the surface of the plastic package material.

As a preferred solution of the packaging method of the fan-out chipprovided by the present invention, in the step 3), the plastic packagematerial adopted for packaging the first chip and the second chipcomprises one of polyimide, silica gel and epoxy resin.

As a preferred solution of the packaging method of the fan-out chipprovided by the present invention, in the step 3), a process adopted forpackaging the first chip and the second chip comprises one of acompression molding process, a printing process, a transfer moldingprocess, a liquid sealant curing molding process, a vacuum laminatingprocess and a spin-coating process.

As a preferred solution of the packaging method of the fan-out chipprovided by the present invention, in the step 5), the metalredistribution layer is fabricated by adopting an evaporation process, asputtering process, an electric plating process or a chemical platingprocess.

As a preferred solution of the packaging method of the fan-out chipprovided by the present invention, a material of the metalredistribution layer comprises one of aluminum, copper, tin, nickel,gold and silver.

As a preferred solution of the packaging method of the fan-out chipprovided by the present invention, the micro-bumps comprise one ofgold-tin solder balls, silver-tin solder balls and copper-tin solderballs, or each of the micro-bumps comprises a copper post, a nickellayer formed on the copper post and a solder ball formed on the nickellayer.

The present invention further provides a package structure of a fan-outchip, comprising: a first chip with bumps and a second chip withoutbumps, a first dielectric layer formed on a surface of the second chip,and through-holes fabricated in the first dielectric layer; a plasticpackage material filled between the first chip and the second chip, witha height of the plastic package material not exceeding heights of eachbump and the first dielectric layer, such that the bumps of the firstchip and the through-holes in the first dielectric layer on the surfaceof the second chip are exposed; a second dielectric layer covering thefirst chip and the second chip, wherein the second dielectric layer haswindows at each bump of the first chip and the through-holes of thesecond chip; a metal redistribution layer filled in each window andformed on the surface of the second dielectric layer for achievingelectrical extractions of the first chip and the second chip andachieving an interconnection between the first chip and the second chip;under bump metallization layers and micro-bumps formed on the metalredistribution layer.

As a preferred solution of the package structure of the fan-out chipprovided by the present invention, the first dielectric layer comprisesone of silicon dioxide, phosphorus-silicate glass, silicon oxycarbide,silicon carbide and polymer.

As a preferred solution of the package structure of the fan-out chipprovided by the present invention, the plastic package materialcomprises one of polyimide, silica gel and epoxy resin.

As a preferred solution of the package structure of the fan-out chipprovided by the present invention, a material of the metalredistribution layer comprises one of aluminum, copper, tin, nickel,gold and silver.

As a preferred solution of the package structure of the fan-out chipprovided by the present invention, the micro-bumps comprise one ofgold-tin solder balls, silver-tin solder balls and copper-tin solderballs.

As a preferred solution of the package structure of the fan-out chipprovided by the present invention, each of the micro-bumps comprises acopper post, a nickel layer formed on the copper post and a solder ballformed on the nickel layer.

As described above, the packaging method and the package structure ofthe fan-out chip provided by the present invention have the followingbeneficial effects: in the present invention, by fabricating thedielectric layers with the through-holes on the surfaces of the firstchip with bumps and the second chip without bumps, exposing the bumps ofthe first chip and metal pads of the second chip and subsequentlyfabricating the metal redistribution layer, the electrical extractionsof and an interconnection between the first chip and the second chip areachieved and thereby the integrated package of the first chip and thesecond chip is achieved. The present invention provides a method and astructure for effectively integrally packaging the first chip with bumpsand the second chip without bumps, which has good effect and wideapplication prospect in the field of semiconductor package.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 to FIG. 13 illustrate schematic views of structures presented ineach step of a packaging method of a fan-out chip provided by thepresent invention, wherein FIG. 13 illustrates a structural schematicview of a package structure of a fan-out chip provided by the presentinvention.

DESCRIPTION OF COMPONENT REFERENCE NUMERALS

101 Second chip

102 Metal pad

103 First dielectric layer

104 Adhesive tape

201 First chip

202 Metal pad

203 Bump

301 Carrier

302 Bonding layer

303 Plastic package material

304 Second dielectric layer

305 Metal redistribution layer

306 Under bump metallization layer

307 Micro-bump

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The implementation modes of the present invention will be describedbelow through specific examples. One skilled in the art can easilyunderstand other advantages and effects of the present inventionaccording to contents disclosed in the description. The presentinvention may also be implemented or applied through other differentspecific implementation modes. Various modifications or variations maybe made to all details in the description based on different points ofview and applications without departing from the spirit of the presentinvention.

It needs to be stated that the drawings provided in the embodiments arejust used for schematically describing the basic concept of the presentinvention, thus only illustrate components only related to the presentinvention and are not drawn according to the numbers, shapes and sizesof components during actual implementation, the configuration, numberand scale of each component during actual implementation thereof may befreely changed, and the component layout configuration thereof may bemore complex.

As illustrated in FIG. 1 to FIG. 13, this embodiment provides apackaging method of a fan-out chip, which comprises the following steps:

As illustrated in FIG. 1 to FIG. 8, firstly perform step 1): providing asecond chip 101, forming a first dielectric layer 103 on a surface ofthe second chip 101 and fabricating through-holes in the firstdielectric layer 103.

In FIG. 6 the bumps 203 are fabricated on metal pads 202 of the firstchip 201.

As an example, the first dielectric layer 103 comprises materials suchas silicon dioxide, phosphorus-silicate glass, silicon oxycarbide,silicon carbide and polymer.

As an example, the dielectric layers are formed on the surfaces of thechips by adopting a spin-coating method, a chemical vapor depositionmethod or a plasma-enhanced chemical vapor deposition method.

In this embodiment, the method comprises the following steps:

As illustrated in FIG. 1 to FIG. 2, firstly perform step 1-1): providinga substrate containing a second chip 101 having metal pads 102 andforming a silicon dioxide layer as the first dielectric layer 103 on thewafer by adopting the plasma-enhanced chemical vapor deposition method.

As illustrated in FIG. 3, then perform step 1-2): fabricatingthrough-holes in the silicon dioxide layer by adopting aphotolithography-etching process, wherein metal pads 102 of the secondchip 101 are exposed from the through-holes.

As illustrated in FIG. 4, then perform step 1-3): bonding an adhesivetape 104 to a surface of the first dielectric layer 103 (i.e., thesilicon dioxide layer) for protection.

As illustrated in FIG. 5, finally perform step 1-4): splitting the waferto obtain individual second chips 101.

As illustrated in FIG. 6, then perform step 2): providing a carrier 301with a bonding layer 302 formed on its surface thereof, and bonding afirst chip 201 and the second chip 101 to the bonding layer 302 side byside.

As an example, the bonding layer 302 may bean adhesive tape 104, or maybe made of a material, e.g., an UV bonding adhesive prepared by aspin-coating method or epoxy resin or the like. In this embodiment, thebonding layer 302 is made of the UV bonding adhesive prepared by aspin-coating method and adhesiveness of the UV bonding adhesive maybedecreased under ultraviolet illumination.

As an example, the carrier 301 may be made of a material such as glass,ceramic, metal or polymer or the like. In this embodiment, the carrier301 comprises one of a glass slab, a transparent semiconductor materialand a transparent polymer, such that it may perform a subsequentexposure operation on the UV bonding adhesive from a back side of thecarrier 301 and the subsequent stripping process can be greatlysimplified.

As illustrated in FIG. 7 to FIG. 8, perform step 3): packaging the firstchip 201 and the second chip 101, then exposing the bumps 203 in thefirst chip 201 and the through-holes in the first dielectric layer 103on the surface of the second chip 101 after the packaging, and removingthe adhesive tape 104 over the second chip by tearing after thepackaging.

As an example, the plastic package material 303 which has packaged thefirst chip 201 and the second chip 101 has a height not exceeding theheights of each bump 203 over the second chip and the post etchingpatterned first dielectric layer 103 after the package, such that eachbump 203 and the patterned first dielectric layer 103 are exposed fromthe surface of the plastic package material 303.

As an example, the plastic package material 303 adopted for packagingthe first chip 201 and the second chip 101 comprises one of thematerials as polyimide, silica gel and epoxy resin, and the plasticpackage material 303 is a light-tight material prepared by adding anadditive.

As an example, the process adopted for packaging the first chip 201 andthe second chip 101 comprises one of a compression molding process, aprinting process, a transfer molding process, a liquid sealant curingmolding process, a vacuum laminating process and a spin-coating process.In this embodiment, the first chip 201 and the second chip 101 arepackaged through an injection process and the plastic package material303 is light-tight silica gel to be injected.

As illustrated in FIG. 9 to FIG. 10, then perform step 4): depositing asecond dielectric layer 304 covering the first chip 201 and the secondchip 101, with windows being opened at each bump 203 of the first chip201 and the through-holes of the second chip 101.

As an example, the second dielectric layer 304 is a silicon dioxidelayer prepared by adopting the plasma-enhanced chemical vapor depositionmethod, and windows are opened at each bump 203 of the first chip 201and the through-holes of the second chip 101 by adopting thephotoetching-etching process. Of course, a needed redistribution shapemay be simultaneously etched in the second dielectric layer 304 asneeded to facilitate the subsequent fabrication of a metalredistribution layer 305 as in FIG. 11.

As illustrated in FIG. 11, then perform step 5): fabricating the metalredistribution layer 305 self-aligned to the recessed windows to achieveelectrical connection between the first chip 201.

As an example, the metal redistribution layer 305 comprises two parts.The first part is used for pulling electrical leads of the first chip201 and the second chip 101, and the second part is used for achievingthe interconnection between the first chip 201 and the second chip 101.

As an example, the metal redistribution layer 305 is fabricated byadopting an evaporation process, a sputtering process, an electricplating process or a chemical plating process.

As an example, a material of the metal redistribution layer 305comprises one of aluminum, copper, tin, nickel, gold and silver.

As illustrated in FIG. 12, then perform step 6): fabricating under-bumpmetallization layers 306 and micro-bumps 307 on the metal redistributionlayer 305.

As an example, the micro-bumps 307 comprise gold-tin solder balls,silver-tin solder balls and copper-tin solder balls. The structure ofthe micro-bumps 307 each comprises a copper post, a nickel layer formedon the copper post and a solder ball formed on the nickel layer.

In a preferred embodiment, the micro-bumps 307 are gold-tin solderballs, and a fabrication method thereof comprises the following steps:first depositing and patterning gold-tin layers on the surfaces of theunder-bump metallization layer 306, second, reflowing the gold-tinlayers to form balls at a high-temperature reflow process, and third,decreasing temperature to freeze gold-tin solder balls.

As illustrated in FIG. 13, finally perform step 7): removing the carrier301 and the bonding layer 302.

As stated before, the bonding layer 302 comprises a UV bonding adhesive,and in the step 7), an exposure method is adopted for reducingadhesiveness of the UV bonding adhesive to achieve a separation of theUV bonding adhesive from the plastic package material 303.

As illustrated in FIG. 13, this embodiment results in a packagestructure of a fan-out chip, comprising: a first chip 201 with bumps 203and a second chip 101 without bumps, a first dielectric layer 103 formedon a surface of the second chip 101 and through-holes fabricated in thefirst dielectric layer 103; a plastic package material 303 filledbetween the first chip 201 and the second chip 101, with a height of theplastic package material 303 not exceeding heights of each bump 203 andthe first dielectric layer 103 such that the bumps 203 of the first chip201 and the through-holes in the first dielectric layer 103 on thesurface of the second chip 101 are exposed; a second dielectric layer304 covering the first chip 201 and the second chip 101, wherein thesecond dielectric layer 304 has windows at each bump 203 of the firstchip 201 and the through-holes of the second chip 101;a metalredistribution layer 305 filled in each window and formed on the surfaceof the second dielectric layer 304 for achieving electrical extractionsof the first chip 201 and the second chip 101 and achieving theinterconnection between the first chip 201 and the second chip 101;under bump metallization layers 306 and micro-bumps 307 formed on themetal redistribution layer 305.

As an example, the first dielectric layer 103 comprises one of silicondioxide, phosphorus-silicate glass, silicon oxycarbide, silicon carbideand polymer.

As an example, the plastic package material 303 comprises one ofpolyimide, silica gel and epoxy resin.

As an example, a material of the metal redistribution layer 305comprises one of aluminum, copper, tin, nickel, gold and silver.

As an example, the micro-bumps 307 comprise one of gold-tin solderballs, silver-tin solder balls and copper-tin solder balls.

As an example, each of the micro-bumps 307 comprises a copper post, anickel layer formed on the copper post and a solder ball formed on thenickel layer.

As described above, the packaging method and the package structure ofthe fan-out chip provided by the present disclosure have the followingbeneficial effects: in the present disclosure, by fabricating thedielectric layers with the through-holes on the surfaces of the firstchip 201 with bumps 203 and the second chip 101 without bumps, exposingthe metal pads of the bumps 203 of the first chip 201 and the metal padsof the second chip 101 and subsequently fabricating the metalredistribution layer 305, the electrical extractions of and theinterconnection between the first chip 201 and the second chip 101 areachieved and thereby the integrated package of the first chip 201 andthe second chip 101 is achieved. The present disclosure provides amethod and a structure for effectively integrally packaging the firstchip 201 with bumps 203 and the second chip 101 without bumps. Thistechnique has good effect and wide application prospect in the field ofsemiconductor packaging. Therefore, the present disclosure effectivelyovercomes various disadvantages in the prior arts and thus has a greatindustrial utilization value.

The above-mentioned embodiments are just used for exemplarily describingthe principle and effects of the present invention instead of limitingthe present invention. One skilled in the art may make modifications orchanges to the above-mentioned embodiments without departing from thespirit and the scope of the present invention. Therefore, all equivalentmodifications or changes made by one skilled having common knowledge inthe art without departing from the spirit and technical conceptdisclosed by the present invention shall be still covered by the claimsof the present invention.

What is claimed is:
 1. A package structure of a fan-out chip,comprising: a first chip, wherein the first chip is connectedelectrically with one or more bumps; a second chip, wherein the secondchip is not connected electrically with bumps, wherein a firstdielectric layer is formed on a surface of the second chip, and whereina plurality of through-holes [fabricated in the first dielectric layer;a plastic package material filled in a space between the first chip andthe second chip and the bumps over the first chip, wherein a height ofthe plastic package material does not exceed either heights of saidbumps or a height of the first dielectric layer, such that the one ormore bumps of the first chip and the plurality of through-holes in thefirst dielectric layer on the surface of the second chip are exposedfrom top during filling of the plastic package material; a seconddielectric layer disposed over the first chip and the second chip,wherein the second dielectric layer is patterned to have first openingseach aligned to one of the bumps connecting to the first chip, and tohave second openings each aligned one of the plurality of through-holesover the second chip; a metal redistribution layer disposed on thesecond dielectric layer, wherein the metal redistribution layer fills inthe first openings and the second openings, wherein the metalredistribution layer is patterned to connect electrically the one ormore bumps of the first chip with the second chip; under-bumpmetallization layers on the metal redistribution layer; and a pluralityof micro-bumps formed on the metal redistribution layer; wherein theplurality of micro-bumps connects electrically with the first chipthrough the metal redistribution layer filled in the first openings andthe one or more bumps of the first chip, and wherein the plurality ofmicro-bumps connects electrically with the second chip through the metalredistribution layer filled in the first openings.
 2. The packagingstructure of the fan-out chip according to claim 1, wherein: the firstdielectric layer comprises one of silicon dioxide, phosphorosilicateglass, silicon oxycarbide, silicon carbide and polymer.
 3. The packagingstructure of the fan-out chip according to claim 1, wherein: the plasticpackage material comprises polyimide, silica gel and epoxy resin.
 4. Thepackaging structure of the fan-out chip according to claim 1, wherein: amaterial of the metal redistribution layer comprises aluminum, copper,tin, nickel, gold and silver.
 5. The package structure of the fan-outchip according to claim 1, wherein: the plurality of micro-bumpscomprises gold-tin solder balls, silver-tin solder balls and copper-tinsolder balls.
 6. The package structure of the fan-out chip according toclaim 1, wherein: the plurality of micro-bumps further comprises acopper post, and a nickel layer formed on the copper post.
 7. Thepackage structure of the fan-out chip according to claim 5, wherein thegold-tin solder balls, the silver-tin solder balls or the copper-tinsolder balls are formed by a reflow process at a high-temperaturefollowed by decreasing temperature to freeze into solder balls.